Also known as 'cathode sputtering' or 'sputtering' in general. Positive ions of a process gas such as argon are accelerated onto a negatively poled target and atomize the target. Only electrically neutral atoms are able to overcome the high potential difference in front of the target and move towards the substrates with energies of very few electron volts.

A distinction is made between the following variants:

Sputtering with DC voltage:
In DC sputtering, an additional negative bias voltage is applied to the substrates, accelerating ions of the process gas toward the workpieces.

Sputtering with high frequency:
A process particularly suitable for the deposition of insulating ceramic layers. In the simplest arrangement with parallel plates, the substrate is modulated at a frequency of 13.56 MHz. Due to the different mobility of light electrons and heavy ions, the negatively charged partial ions accumulate in the positive half-wave in front of the substrate, where they form a negative space charge.

Magnetron sputtering:
This process aims to increase the sputtering yield. A magnet fixed behind the target holds the plasma electrons on spiral paths above the sputtering source. This arrangement also reduces the temperature load on the substrates. Sputtering is used for coating planar components in electronics or in the decorative field.